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GT50J122 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J122 Current Resonance Inverter Switching Application * * * * * Enhancement mode type High speed : tf = 0.16 s (typ.) (IC = 60A) Low saturation voltage: VCE (sat) = 1.9 V (typ.) (IC = 60A) Fourth-generation IGBT TO-3P(N) (Toshiba package name) Unit: mm Absolute Maximum Ratings (Ta = 25C) Characteristics Collector-emitter voltage Gate-emitter voltage Continuous collector current Pulsed collector current Collector power dissipation Junction temperature Storage temperature range @ Tc = 100C @ Tc = 25C @ Tc = 100C @ Tc = 25C Symbol VCES VGES IC ICP PC Tj Tstg Rating 600 25 31 50 120 62 156 150 -55 to 150 Unit V V A A W C C JEDEC JEITA TOSHIBA 2-16C1C Weight: 4.6 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Thermal resistance Symbol Rth (j-c) Max 0.80 Unit C/W Marking TOSHIBA GT50J122 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 1 2006-11-01 GT50J122 Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Switching time Turn-on time Fall time Turn-off time Symbol IGES ICES VGE (OFF) VCE (sat) Cies tr ton tf toff Test Condition VGE = 25 V, VCE = 0 VCE = 600 V, VGE = 0 IC = 60 mA, VCE = 5 V IC = 60 A, VGE = 15 V VCE = 10 V, VGE = 0, f = 1 MHz Resistive Load VCC = 300 V, IC = 60 A VGG = 15 V, RG = 30 (Note 1) Min 3.0 Typ. 1.9 4800 0.17 0.23 0.16 0.41 Max 500 1.0 6.0 2.5 0.26 s Unit nA mA V V pF Note 1: Switching time measurement circuit and input/output waveforms VGE 0 RG 0 VCC 0 VCE td (off) RL IC 90% 90% 10% 90% 10% tf toff 10% tr ton 2 2006-11-01 GT50J122 IC - VCE 120 Common emitter Tc = -40C 100 15 120 Common emitter Tc = 25C 100 IC - VCE 15 20 80 10 8 7 (A) 20 80 8 7 Collector current IC Collector current IC (A) 60 40 10 60 40 20 VGE = 6 V VGE = 6 V 20 0 0 1 2 3 4 5 0 0 1 2 3 4 5 Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) IC - VCE 120 Common emitter Tc = 125C 100 20 10 120 Common emitter VCE = 5 V IC - VGE (A) Collector current IC 15 7 60 Collector current IC 80 (A) 80 60 VGE = 6 V 40 8 100 40 25 -40 Tc = 125C 20 20 0 0 1 2 3 4 5 0 0 2 4 6 8 10 Collector-emitter voltage VCE (V) Gate-emitter voltage VGE (V) VCE (sat) - Tc 3.2 IC = 120 A 2.4 80 Collector-emitter saturation voltage VCE (sat) (V) 60 1.6 30 10 0.8 Common emitter VGE = 15 V 0.0 -60 -20 20 60 100 140 Case temperature Tc (C) 3 2006-11-01 GT50J122 VCE, VGE - QG 400 Common emitter RL = 5 Tc = 25C 20 30000 10000 C - VCE VCE (V) VGE (V) Collector-emitter voltage Capacitance C (pF) 300 15 5000 3000 1000 500 300 100 50 30 10 0.0 Common emitter VGE = 0 f = 1 MHz Tc = 25C 1 10 Cies 200 VCE = 300 V 100 10 Gate-emitter voltage Coes 100 5 200 Cres 0 0 80 160 240 0 320 100 1000 Gate charge QG (nC) Collector-emitter voltage VCE (V) Switching Time - RG Common emitter 3V CC = 300 V IC = 60 A VGG = 15 V 1 Tc = 25C 0.5 0.3 5 10 5 toff ton 3 Switching Time - IC Common emitter VCC = 300 V RG = 30 VGG = 15 V Tc = 25C toff tf 0.1 t on 0.05 0.03 tr Switching time (s) Switching time (s) tr tf 1 0.5 0.3 0.1 0.05 0.03 0.01 0 10 100 1000 0.01 0 10 20 30 40 50 60 70 Gate resistance RG () Collector current IC (A) Safe Operating Area 1000 IC max (continuous) IC max (pulsed) * 100 10 s* 30 100 s* 10 10 ms* 1 ms* 3 DC operation 1 1 10 100 1000 10000 1 1 10 *: Single non-repetitive pulse Tc = 25C Curves must be derated linearly with increases in temperature. 3000 1000 500 300 100 50 30 10 5 3 Tj 125C VGG = 20 V RG = 10 Reverse Bias SOA 300 (A) Collector current IC Collector current IC (A) 100 1000 10000 Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) 4 2006-11-01 GT50J122 ICmax - Tc Transient thermal impedance rth (t) (C/W) 60 102 rth (t) - tw Tc = 25C Maximum DC collector current ICmax (A) 50 Common emitter VGE = 15 V 101 40 100 30 10-1 20 10 10-2 0 25 50 75 100 125 150 10-3 10-5 10-4 10-3 10-2 10-1 100 101 102 Case temperature Tc (C) Pulse width tw (s) 5 2006-11-01 GT50J122 RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 20070701-EN * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2006-11-01 |
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